0912GN-300.rev2 microsemi rfis ts reserves the righ t to make changes without further notice. to verify the current version please check our web site at www.microsemi.com or contact our factory directly. general description the 0912GN-300 is an internally matched, common source, class ab gan on sic hemt transistor capable of providing over 18db gain, 300 watts of pulsed rf output power at 128 s pulse width, 10% duty factor across the 960 to 1215 mhz band. the transistor has internal pre- match for optimal performance. this hermetically sealed transistor can be used for broadband avionics data li nk applications. it utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. case outline 55-kr common source absolute maximum ratings maximum power dissipation device dissipation @ 25 ? c 600 w maximum voltage and current drain-source voltage (v dss ) 150 v gate-source voltage (v gs ) -8 to +0 v maximum temperatures storage temperature (t stg ) -55 to +125 ? c operating junction temperature +200 ? c electrical characteristics @ 25 ? c symbol characteristics test conditions min typ max units pout output power pout=300 w, freq=960, 1090, 1215 mhz 300 w gp power gain pout=300w, freq=960, 1090, 1215 mhz 17.5 18.5 db ? d drain efficiency pout=300 w, freq=960, 1090, 1215 mhz 45 52 % dr droop pout=300w, freq=960, 1090, 1215 mhz 0.7 db vswr-t load mismatch tolerance pout=300w, freq= 1215mhz 3:1 ? jc thermal resistance pulse wi dth=128us, duty=10% 0.3 c/w ? bias condition: vdd=+65v, idq=50ma average current (vgs= -2.0 ~ -4.5v ) with gate pulsing at pulse width 400us, period at 1.28ms functional characteristics @ 25 ? c i d(off) drain leakage current v gs = -8v, v d = 65v 6 ma i g(off) gate leakage current v gs = -8v, v d = 0v 5 ma bv dss drain-source breakdown voltage v gs =-8v, i d = 5ma 250 v issue january 2013 0912GN-300 300 watts - 65 volts, 128 ? s, 10% broad band data link 960 - 1215 mhz downloaded from: http:///
0912GN-300.rev2 microsemi rfis ts reserves the righ t to make changes without further notice. to verify the current version please check our web site at www.microsemi.com or contact our factory directly. typical rf performance data frequency pin (w) pout (w) id (a) eff (%) rl(dbc) g (db) 0.96ghz 4.6 300 0.98 47 -7 18.2 1.09ghz 4.1 300 0.89 51.8 -7 18.6 1.215ghz 3.8 300 0.86 53.8 -12 18.9 30% 40% 50% 60% 70% 80% 90% 100% 0 50 100 150 200 250 300 350 2.5 3.2 4.0 5.0 efficency ? (%) pout(w) pin(w) 0912gn \ 300 ? 65v 128us@10% 960 1090 1215 17 18 19 20 21 22 23 24 0 50 100 150 200 250 300 350 2.5 3.2 4.0 5.0 gain(db) pout(w) pin(w) 0912gn \ 300 ? 65v 128us@10% 960 1090 1215 0912GN-300 300 watts -128us 10% transistor 65 volts, 960 mhz-1215mhz downloaded from: http:///
0912GN-300.rev2 microsemi rfis ts reserves the righ t to make changes without further notice. to verify the current version please check our web site at www.microsemi.com or contact our factory directly. transistor impedance information note: zsource is looking into the input circuit; load z is looking into the output circuit. 0912GN-300 300 watts -128us 10% transistor 65 volts, 960 mhz-1215mhz impedance data freq (ghz) z source z load 0.96 1.68 C j2.96 3.245 C j2.446 1.09 1.58 C j1.68 3.368 - j1.859 1.215 1.59 - j0.42 3.415 C j1.385 downloaded from: http:///
0912GN-300.rev2 microsemi rfis ts reserves the righ t to make changes without further notice. to verify the current version please check our web site at www.microsemi.com or contact our factory directly. test circuit diagram board material: roger duroid 60 06 @ 25 mil thic kness, er=6.15 item description value item w(mil) l(mil) item w(mil) l(mil) c1 atc ? 800a ? 100pf i1 36 95 d1 820 250 c2 atc ? 100b 100pf i2 36 80 d2 588 80 c3 atc ? 100b 10000pf i3 166 36 d3 86 100 c4 atc ? 100b 1000pf i4 78 220 d4 188 80 c5 atc ? 100b ? 56pf i5 201 36 d5 502 112 c6 elyctrylic ? capacitor ? (63v) 2200uf i6 260 85 d6 400 258 c7 atc ? 800a ? 12pf i7 542 300 d7 210 36 r1 0805 11.5 ? ohm i8 468 130 d8 70 220 i9 258 130 d9 130 36 note ? c3, ? c4 ? x2 i10 560 236 d10 120 102 i11 36 1200 d11 36 204 i12 315 195 d12 36 741 d13 140 80 component ? list input ? layout output ? layout 0912GN-300 250 watts -128us 10% transistor 65 volts, 960 mhz-1215mhz downloaded from: http:///
0912GN-300.rev2 microsemi rfis ts reserves the righ t to make changes without further notice. to verify the current version please check our web site at www.microsemi.com or contact our factory directly. 55-kr package dimension dimension min (mil) min (mm) max (mil) max (mm) a 370 9.40 372 9.44 b 498 12.65 500 12.7 c 700 17.78 702 17.83 d 830 21.08 832 21.13 e 1030 26.16 1032 26.21 f 101 2.56 102 2.59 g 151 3.84 152 3.86 h 385 9.78 387 9.83 i 130 3.30 132 3.35 j 003 .076 004 0.10 k 135 3.43 137 3.48 l 105 2.67 107 2.72 m 085 2.16 86 2.18 n 065 1.65 66 1.68 0912GN-300 250 watts -128us 10% transistor 65 volts, 960 mhz-1215mhz downloaded from: http:///
|
